onsemi
FDD5N50NZFTM
MFR #FDD5N50NZFTM
FPN#FDD5N50NZFTM-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 500V 3.7A(Tc) 62.5W(Tc) Surface Mount, TO-252-3
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD5N50NZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-252 (DPAK) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 500V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 485pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 4A (Tc) |
| Maximum Drain to Source Resistance | 1.75 Ohm @ 1.85A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 62W (Tc) |
| Maximum Pulse Drain Current | 16A |
| Maximum Total Gate Charge | 12nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 4nC |
| Typical Gate to Source Charge | 2nC |