(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDC8878
onsemi

FDC8878

MFR #FDC8878

FPN#FDC8878-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 8A(Ta) 8A(Tc) 1.6W(Ta) Surface Mount, SOT-23-6
Datasheet
97541-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC8878
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1040pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current8A (Ta), 8A (Tc)
Maximum Drain to Source Resistance16 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge1.7nC