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FDC6321C
onsemi

FDC6321C

MFR #FDC6321C

FPN#FDC6321C-FL

MFRonsemi

Part DescriptionMOSFET Array 25V 680mA, 460mA 700mW Surface Mount, TSOT-23-6
Datasheet
101204-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC6321C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage25V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage8V
Input Capacitance50pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current680mA, 460mA
Maximum Drain to Source Resistance450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 500mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation700mW
Maximum Pulse Drain Current2A
Maximum Total Gate Charge2.3nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge450pC
Typical Gate to Source Charge380pC