FDC6302P
MFR #FDC6302P
FPN#FDC6302P-FL
MFRonsemi
Part DescriptionMosfet Array 2 P-Channel (Dual) 25V 120mA 700mW Surface Mount SuperSOT-6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDC6302P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 25V |
| Drive Voltage | 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 8V |
| Input Capacitance | 11pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 120mA |
| Maximum Drain to Source Resistance | 10 Ohm @ 200mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 700mW (Ta) |
| Maximum Pulse Drain Current | 500mA |
| Maximum Total Gate Charge | 310pC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 50pC |
| Typical Gate to Source Charge | 120pC |