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FDC5612
onsemi

FDC5612

MFR #FDC5612

FPN#FDC5612-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 60V 4.3A (Ta) SOT-23-6
Datasheet
44496-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC5612
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance650pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current4.3A (Ta)
Maximum Drain to Source Resistance55 mOhm @ 4.3A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC
Typical Gate to Source Charge2.4nC