(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDBL86063-F085
onsemi

FDBL86063-F085

MFR #FDBL86063-F085

FPN#FDBL86063-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 100V 240A (Tj) 8-SFN
Datasheet
44485-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDBL86063_F085
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5120pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current240A (Tc)
Maximum Drain to Source Resistance2.6 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation357W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge95nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-HPSOF
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge22nC