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FDBL0210N80
onsemi

FDBL0210N80

MFR #FDBL0210N80

FPN#FDBL0210N80-FL

MFRonsemi

Part DescriptionMOSFET N-CH 80V 240A 8HPSOF
Datasheet
97538-Datasheet
Quote Only
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Multiples of: 2000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDBL0210N80
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-HPSOF
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance10000pF
Input Capacitance Test Voltage40V
Maximum Continuous Drain Current240A (Tc)
Maximum Drain to Source Resistance2 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation357W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge169nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge24nC
Typical Gate to Source Charge47nC