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FDB8441-F085
onsemi

FDB8441-F085

MFR #FDB8441-F085

FPN#FDB8441-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 28A(Ta) 80A(Tc) 300W(Tc) Surface Mount, TO-263-3
Datasheet
44468-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB8441_F085
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance15000pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current28A (Ta), 80A (Tc)
Maximum Drain to Source Resistance2.5 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation300W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge280nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge49nC
Typical Gate to Source Charge60nC