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FDB035N10A
onsemi

FDB035N10A

MFR #FDB035N10A

FPN#FDB035N10A-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100 V 120A (Tc) 333W (Tc) Surface Mount, TO-263-3
Datasheet
44452-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB035N10A
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7295pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current120A (Tc)
Maximum Drain to Source Resistance3.5 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation333W (Tc)
Maximum Pulse Drain Current856A
Maximum Total Gate Charge116nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge25nC
Typical Gate to Source Charge24nC