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FDB016N04AL7
MFR #FDB016N04AL7
FPN#FDB016N04AL7-FL
MFRonsemi
Part DescriptionN-Channel 40 V 160A (Tc) 283W (Tc) Surface Mount TO-263-7
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDB016N04AL7 |
Packaging Type | Tape and Reel |
Packaging Quantity | 800 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 40V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 11600pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 160A (Tc) |
Maximum Drain to Source Resistance | 1.6 mOhm @ 80A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 283W (Tc) |
Maximum Pulse Drain Current | 1.224kA |
Maximum Total Gate Charge | 167nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | D2PAK (TO-263) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 17nC |
Typical Gate to Source Charge | 28nC |