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FDB016N04AL7

FDB016N04AL7

MFR #FDB016N04AL7

FPN#FDB016N04AL7-FL

MFRonsemi

Part DescriptionN-Channel 40 V 160A (Tc) 283W (Tc) Surface Mount TO-263-7
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDB016N04AL7
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance11600pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current160A (Tc)
Maximum Drain to Source Resistance1.6 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation283W (Tc)
Maximum Pulse Drain Current1.224kA
Maximum Total Gate Charge167nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge28nC