(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDA24N50
onsemi

FDA24N50

MFR #FDA24N50

FPN#FDA24N50-FL

MFRonsemi

Part DescriptionN-Channel 500 V 24A (Tc) 270W (Tc) Through Hole TO-3PN
Datasheet
99713-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDA24N50
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance4150pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance190 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation270W (Tc)
Maximum Pulse Drain Current96A
Maximum Total Gate Charge85nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-3PN
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge26nC
Typical Gate to Source Charge18nC