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FCPF7N60YDTU
onsemi

FCPF7N60YDTU

MFR #FCPF7N60YDTU

FPN#FCPF7N60YDTU-FL

MFRonsemi

Part DescriptionN-Channel 600 V 7A (Tc) 31W (Tc) Through Hole TO-220F-3 (Y-Forming)
Datasheet
44435-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF7N60
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance920pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7A (Tc)
Maximum Drain to Source Resistance600 mOhm @ 3.5A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation31W (Tc)
Maximum Pulse Drain Current21A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220F-3 (Y-Forming)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11.5nC
Typical Gate to Source Charge4.2nC