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FCPF400N80ZL1
onsemi

FCPF400N80ZL1

MFR #FCPF400N80ZL1

FPN#FCPF400N80ZL1-FL

MFRonsemi

Part DescriptionN-Channel 800 V 11A (Tc) 35.7W (Tc) Through Hole, TO-220F-3
Datasheet
44429-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF400N80ZL1
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2350pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11A (Tc)
Maximum Drain to Source Resistance400 mOhm @ 5.5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 1.1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation35.7W (Tc)
Maximum Pulse Drain Current33A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220F-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge17nC
Typical Gate to Source Charge8.6nC