FCPF380N65FL1-F154
MFR #FCPF380N65FL1-F154
FPN#FCPF380N65FL1-F154-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCPF380N65FL1-F154 |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1680pF |
| Input Capacitance Test Voltage | 100V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 10.2A (Tc) |
| Maximum Drain to Source Resistance | 380 mOhm @ 5.1A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 33W (Tc) |
| Maximum Pulse Drain Current | 30.6A |
| Maximum Total Gate Charge | 43nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 14nC |
| Typical Gate to Source Charge | 6.6nC |