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FCPF20N60ST
onsemi

FCPF20N60ST

MFR #FCPF20N60ST

FPN#FCPF20N60ST-FL

MFRonsemi

Part DescriptionN-Channel 600 V 20A (Tc) - Through Hole TO-220F
Datasheet
44421-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF20N60
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance3080pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance190 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation39W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge98nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220F-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge36nC
Typical Gate to Source Charge13.5nC