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FCPF190N60-F154
onsemi

FCPF190N60-F154

MFR #FCPF190N60-F154

FPN#FCPF190N60-F154-FL

MFRonsemi

Part DescriptionN-Channel 600 V 20.2A (Tj) 39W (Tc) Through Hole TO-220F-3
Datasheet
44417-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF190N60-F154
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2950pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current20.2A (Tj)
Maximum Drain to Source Resistance199 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation39W (Tc)
Maximum Pulse Drain Current60.6A
Maximum Total Gate Charge74nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220FP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge21nC
Typical Gate to Source Charge9nC