(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FCPF165N65S3L1
onsemi

FCPF165N65S3L1

MFR #FCPF165N65S3L1

FPN#FCPF165N65S3L1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 19A (Tc) TO-220-3
Datasheet
102516-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF165N65S3L1
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1415pF
Input Capacitance Test Voltage400V
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A (Tc)
Maximum Drain to Source Resistance165 mOhm @ 9.5A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 1.9mA
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation35W (Tc)
Maximum Pulse Drain Current47.5A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Package TypeTO-220F-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge15nC
Typical Gate to Source Charge8.3nC