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FCPF11N60NT
onsemi

FCPF11N60NT

MFR #FCPF11N60NT

FPN#FCPF11N60NT-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole, TO-220-3
Datasheet
44412-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCPF11N60NT
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1505pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10.8A (Tc)
Maximum Drain to Source Resistance299 mOhm @ 5.4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation32.1W (Tc)
Maximum Pulse Drain Current32.4A
Maximum Total Gate Charge35.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.8nC
Typical Gate to Source Charge4.9nC