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FCP13N60N
onsemi

FCP13N60N

MFR #FCP13N60N

FPN#FCP13N60N-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 13A (Tc) TO-220-3
Datasheet
44401-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCP13N60N
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1765pF
Input Capacitance Test Voltage100V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13A (Tc)
Maximum Drain to Source Resistance258 mOhm @ 6.5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation116W (Tc)
Maximum Pulse Drain Current39A
Maximum Total Gate Charge39.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.5nC
Typical Gate to Source Charge6nC