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onsemi

FCMT099N65S3

MFR #FCMT099N65S3

FPN#FCMT099N65S3-FL

MFRonsemi

Part DescriptionMOSFET N-CH 650V 30A POWER88
Datasheet
165376-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCMT099N65S3
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypePower88
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2270pF
Input Capacitance Test Voltage400V
Maximum Continuous Drain Current30A (Tc)
Maximum Drain to Source Resistance99 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 3mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation227W (Tc)
Maximum Pulse Drain Current75A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge23nC
Typical Gate to Source Charge13nC