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onsemi

FCH104N60

MFR #FCH104N60

FPN#FCH104N60-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 37A (Tc) 357W (Tc) Through Hole, TO-247-3
Datasheet
44389-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCH104N60
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4165pF
Input Capacitance Test Voltage380V
Life Cycle StatusObsolete
Maximum Continuous Drain Current37A (Tc)
Maximum Drain to Source Resistance104 mOhm @ 18.5A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation357W (Tc)
Maximum Pulse Drain Current111A
Maximum Total Gate Charge82nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-3LD
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge15nC
Typical Gate to Source Charge14nC