_medium_204x204px.png)
onsemi
FCB20N60F-F085
MFR #FCB20N60F-F085
FPN#FCB20N60F-F085-FL
MFRonsemi
Part DescriptionN-Channel 600 V 20A (Tc) 405W (Tc) Surface Mount DPAK (TO-263)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FCB20N60F_F085 |
Packaging Type | Tape and Reel |
Packaging Quantity | 800 |
Lifecycle Status | Obsolete |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 600V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±30V |
Input Capacitance | 2035pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 20A (Tc) |
Maximum Drain to Source Resistance | 195 mOhm @ 20A, 10V |
Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 405W (Tc) |
Maximum Pulse Drain Current | N/A |
Maximum Total Gate Charge | 102nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TO-263 (D2PAK) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 41.5nC |
Typical Gate to Source Charge | 102nC |