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FCB20N60F-F085
MFR #FCB20N60F-F085
FPN#FCB20N60F-F085-FL
MFRonsemi
Part DescriptionN-Channel 600 V 20A (Tc) 405W (Tc) Surface Mount DPAK (TO-263)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FCB20N60F_F085 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 600V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 2035pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 20A (Tc) |
| Maximum Drain to Source Resistance | 195 mOhm @ 20A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 405W (Tc) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 102nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 41.5nC |
| Typical Gate to Source Charge | 102nC |
