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FCB20N60F-F085
onsemi

FCB20N60F-F085

MFR #FCB20N60F-F085

FPN#FCB20N60F-F085-FL

MFRonsemi

Part DescriptionN-Channel 600 V 20A (Tc) 405W (Tc) Surface Mount DPAK (TO-263)
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFCB20N60F_F085
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2035pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance195 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation405W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge102nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge41.5nC
Typical Gate to Source Charge102nC