onsemi
ESD8101FCT5G
MFR #ESD8101FCT5G
FPN#ESD8101FCT5G-FL
MFRonsemi
Part DescriptionTVS DIODE 3.3VWM 10VC 2DSN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Diodes and Rectifiers |
| Family Name | ESD8101 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 10000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | 2-DSN (0.44x0.23) |
| Clamping Voltage | 10V |
| Configuration | Single |
| ESD Air Gap Voltage | 30kV |
| ESD Contact Voltage | 30kV |
| Maximum EFT Protection Current | N/A |
| Maximum Junction Temperature | 150°C |
| Maximum Leakage Current | 1µA |
| Maximum Operating Temperature | N/A |
| Maximum Peak Pulse Current | 16A |
| Maximum Peak Pulse Power | 60W |
| Maximum Power Dissipation | N/A |
| Minimum Breakdown Voltage | 5.5V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Number of Bidirectional Channels | N/R |
| Number of Channels | 1 |
| Number of Unidirectional Channels | 1 |
| Polarity | Uni-Directional |
| Power Line Protection | No |
| Test Current | 1mA |
| Tolerance | ±20% |
| Type | Zener |
| Typical Breakdown Voltage | 7.9V |
| Typical Dynamic Resistance | 460 mOhm |
| Typical I O Capacitance | 0.2pF @ 1MHz |
| Typical Reverse Standoff voltage | 3.3V (Max) |