
onsemi
EFC4626R-TR
MFR #EFC4626R-TR
FPN#EFC4626R-TR-FL
MFRonsemi
Part DescriptionMOSFET Array 1.4W Surface Mount, 4-BGA
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | EFC4626R |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 8000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Not Affected |
| Package Type | EFCP1010-4DG-020 |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 24V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±10V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Maximum Continuous Drain Current | N/A |
| Maximum Drain to Source Resistance | 46.2 mOhm @ 2A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 1.4W |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 7.5nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
