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onsemi

EFC4619R-TR

MFR #EFC4619R-TR

FPN#EFC4619R-TR-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 24V 6A (Ta) 4-BGA T/R
Datasheet
102532-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC4619R
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeDepletion
Configuration2 N-Channel
Drain Source Voltage24V
Drive VoltageN/A
FET FeatureLogic Level Gate, 2.5V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A (Ta)
Maximum Drain to Source Resistance24 mOhm @ 3A, 4V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge21.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeEFCP1616-4CE-022
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A