(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

EFC3C001NUZTCG

MFR #EFC3C001NUZTCG

FPN#EFC3C001NUZTCG-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel Common Drain 1.6W Surface Mount, 4-FBGA
Datasheet
100823-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameEFC3C001NUZ
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeDepletion
Configuration2 N-Channel, Common Drain
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureLogic Level Gate, 2.5V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±10V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A (Ta)
Maximum Drain to Source Resistance30 mOhm @ 2A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeEFCP1313-4DG-020
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A