
ECH8601M-C-TL-H
MFR #ECH8601M-C-TL-H
FPN#ECH8601M-C-TL-H-FL
MFRonsemi
Part DescriptionMosfet Array 24V 8A 1.5W Surface Mount 8-ECH
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | ECH8601M |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel, Common Drain |
| Drain Source Voltage | 24V |
| Drive Voltage | N/A |
| FET Feature | Logic Level Gate, 2.5V Drive |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±12V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 8A (Ta) |
| Maximum Drain to Source Resistance | 23 mOhm @ 4A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 1.5W (Ta) |
| Maximum Pulse Drain Current | 60A |
| Maximum Total Gate Charge | 7.5nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Package Type | 8-ECH |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2nC |
| Typical Gate to Source Charge | 1.5nC |
