(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

ECH8308-TL-H

MFR #ECH8308-TL-H

FPN#ECH8308-TL-H-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 10A (Ta) 8-SMD
Datasheet
142287-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameECH8308
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance2300pF
Input Capacitance Test Voltage6V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Ta)
Maximum Drain to Source Resistance12.5 mOhm @ 5A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge26nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeSOT-28FL/ECH8
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.1nC
Typical Gate to Source Charge4nC