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DTA123JM3T5G
onsemi

DTA123JM3T5G

MFR #DTA123JM3T5G

FPN#DTA123JM3T5G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Datasheet
43433-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameDTA123JM3
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R12.2 kOhm
ConfigurationPNP - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation260mW
Minimum DC Current Gain80 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-723
Resistor Ratio R1 R20.056
Technology TypeN/A
Transistor TypeSingle