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CY7S1061GE30-10BVXI
Infineon

CY7S1061GE30-10BVXI

MFR #CY7S1061GE30-10BVXI

FPN#CY7S1061GE30-10BVXI-FL

MFRInfineon

Part DescriptionSRAM - Synchronous, SDR Memory IC 16Mb (1M x 16) Parallel 10ns, 48-VFBGA

Legacy ManufacturerCypress Semiconductor

Datasheet
42434-Datasheet
Quote Onlymore info
Multiples of: 4800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategoryMemory
CategoryMemory ICs
Sub CategorySRAM
Family NameCY7S1061GE
Packaging TypeTray
Packaging Quantity4800
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Address Bus Width20Bits
ECCYes
FunctionN/A
Interface TypeParallel
Life Cycle StatusActive
Maximum Access Time10ns
Maximum Clock FrequencyN/A
Maximum Operating Temperature85°C (TA)
Maximum Supply Current110mA
Maximum Supply Voltage3.6V
Memory Size16Mbit
Minimum Operating Temperature-40°C (TA)
Minimum Supply Voltage2.2V
Number of Bits per Word16Bits
Number of BurstN/A
Number of I O Lines16
Number of PortsSingle Port
Number of Words1Mword
Organization1M x 16
PK Package Dimensions NotePopular package size 38% from Suppliers use this Dimension
Package Type48-VFBGA (6x8)
SRAM TypeN/A
TimingAsynchronous
TypeN/A
Typical Supply Voltage2.5V, 3.3V, 5V
Write Cycle Time10ns