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CY14B104NA-BA20XI
Infineon

CY14B104NA-BA20XI

MFR #CY14B104NA-BA20XI

FPN#CY14B104NA-BA20XI-FL

MFRInfineon

Part DescriptionNVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 20ns Surface Mount, 48-FBGA

Legacy ManufacturerCypress Semiconductor

Datasheet
41011-Datasheet
Quote Onlymore info
Multiples of: 598more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategoryMemory
CategoryMemory ICs
Sub CategoryNVRAM
Family NameCY14B104NA
Packaging TypeTray
Packaging Quantity598
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Bus Width16Bits
Interface TypeParallel
Life Cycle StatusActive
Maximum Access Time20ns
Maximum Clock FrequencyN/A
Maximum Operating Temperature85°C (TA)
Maximum Supply Current70mA
Maximum Supply Voltage3.6V
Memory Size4Mbit
Minimum Operating Temperature-40°C (TA)
Minimum Supply Voltage3V
Organization256k x 16
Package Type48-FBGA (6x10)
Process TechnologyCMOS
Typical Supply Voltage3V
Write Cycle Time20ns