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onsemi

BUT11A

MFR #BUT11A

FPN#BUT11A-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 450V 5A 100W Through Hole, TO-220-3
Datasheet
97462-Datasheet
Quote Only
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBUT11A
Packaging TypeBag
Packaging Quantity1200
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-220-3
ConfigurationNPN
Gain BandwidthN/A
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage450V
Maximum Collector Emitter Saturation Voltage1.5V @ 500mA, 2.5A
Maximum Cutoff Collector Current1mA
Maximum DC Current GainN/A
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation100W
Minimum DC Current GainN/A
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle