(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
BSS138-F085
onsemi

BSS138-F085

MFR #BSS138-F085

FPN#BSS138-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 50V 220mA 360mW (Ta) Surface Mount, SOT-23-3
Datasheet
40033-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSS138_F085
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage50V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance27pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current220mA (Ta)
Maximum Drain to Source Resistance3.5 Ohm @ 220mA, 10V
Maximum Gate to Source Threshold Voltage1.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation360mW (Ta)
Maximum Pulse Drain Current880mA
Maximum Total Gate Charge2.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge400pC
Typical Gate to Source Charge100pC