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BD678G
onsemi

BD678G

MFR #BD678G

FPN#BD678G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 60 V 4 A 40 W Through Hole TO-126
Datasheet
39885-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD678G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage60V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage2.5V @ 30mA, 1.5A
Maximum Cutoff Collector Current500µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation40W
Minimum DC Current Gain750 @ 1.5A, 3V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle