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BD677ASTU
onsemi

BD677ASTU

MFR #BD677ASTU

FPN#BD677ASTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 60 V 4 A 40 W Through Hole TO-126-3
Datasheet
39882-Datasheet
Quote Onlymore info
Multiples of: 1920more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD677A
Packaging TypeTube
Packaging Quantity1920
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage60V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage2.8V @ 40mA, 2A
Maximum Cutoff Collector Current500µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation40W
Minimum DC Current Gain750 @ 2A, 3V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle