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BD435STU
onsemi

BD435STU

MFR #BD435STU

FPN#BD435STU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 32 V 4 A 3MHz 36 W Through Hole TO-126-3
Datasheet
39873-Datasheet
Quote Onlymore info
Multiples of: 1920more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD435
Packaging TypeTube
Packaging Quantity1920
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth3MHz
Life Cycle StatusObsolete
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage32V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 2A
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation36W
Minimum DC Current Gain50 @ 2A, 1V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle