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BD13916S

BD13916S

MFR #BD13916S

FPN#BD13916S-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD139-FSC
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Current1.5A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage500mV @ 50mA, 500mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.25W
Minimum DC Current Gain100 @ 150mA, 2V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle