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BC848CPDW1T1G

MFR #BC848CPDW1T1G

FPN#BC848CPDW1T1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor Array NPN, PNP 30V 100mA 100MHz 250mW Surface Mount SC-88/SC70-6/SOT-363
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBC848CPDW1T1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Package TypeSC-88/SC70-6/SOT-363
ConfigurationNPN, PNP
Gain Bandwidth100MHz
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage600mV @ 5mA, 100mA
Maximum Cutoff Collector Current15nA
Maximum DC Current Gain800 @ 2mA, 5V
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation380mW
Minimum DC Current Gain420 @ 2mA, 5V
Minimum Junction Temperature-55°C
Minimum Operating Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Technology TypeSI
Transistor TypeArray