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BBS3002-TL-1E
onsemi

BBS3002-TL-1E

MFR #BBS3002-TL-1E

FPN#BBS3002-TL-1E-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 100A (Ta) Surface Mount, TO-263-3
Datasheet
118282-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBBS3002
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance13200pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current100A (Ta)
Maximum Drain to Source Resistance5.8 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C
Maximum Power Dissipation90W (Tc)
Maximum Pulse Drain Current400A
Maximum Total Gate Charge280nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge55nC
Typical Gate to Source Charge50nC