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AFGHL50T65RQDN
onsemi

AFGHL50T65RQDN

MFR #AFGHL50T65RQDN

FPN#AFGHL50T65RQDN-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 78A 346W TO247-3 Tube
Datasheet
136936-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFGHL50T65RQDN
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge65nC
IGBT TypeField Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current78A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage1.81V @ 50A, 15V
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation346W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3
Pulsed Collector Current200A
Reverse Recovery Time57ns
Switching Delay Time41ns/76ns
Switching Energy3.09mJ (on), 830µJ (off)
Technology TypeN/A