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NXP

A3T18H408W24SR3

MFR #A3T18H408W24SR3

FPN#A3T18H408W24SR3-FL

MFRNXP

Part DescriptionAIRFAST RF POWER LDMOS TRANSISTO
Datasheet
38230-Datasheet
Quote Onlymore info
Multiples of: 250more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA3T18H408W24S
Packaging TypeTape and Reel
Packaging Quantity250
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusNot Compliant
1dB Compression Point (P1dB)N/A
3dB Compression Point (P3dB)55.4dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain15.2dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency1.88GHz
Maximum Operating Temperature150°C (TC)
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency1.805GHz
Minimum Operating Temperature-40°C (TC)
Noise FigureN/A
Noise Test Current350mA
Noise Test Voltage30V
Number of Element per Chip2
Package TypeNI-780S-4L2L
Signal TypeContinuous Wave
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power56W
Voltage Rating65V