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2SD1815T-E

MFR #2SD1815T-E

FPN#2SD1815T-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 100V 3A 180MHz 1W Through Hole, TO-251-3
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SD1815
Packaging TypeBulk
Packaging QuantityN/A
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth180MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage400mV @ 150mA, 1.5A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain200 @ 500mA, 5V
Minimum Operating TemperatureN/A
Package TypeIPAK / TP
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle