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onsemi

2SC3651-TD-E

MFR #2SC3651-TD-E

FPN#2SC3651-TD-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 150MHz Surface Mount, TO-243AA
Datasheet
209162-Datasheet
Quote Only
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Multiples of: 1069
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Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SC3651
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusAffected
Package TypePCP
ConfigurationNPN
Gain Bandwidth150MHz
Maximum Collector Current200mA
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage500mV @ 2mA, 100mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum DC Current Gain2000 @ 10mA, 5V
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation500mW
Minimum DC Current Gain500 @ 10mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle