2SB1215T-H
MFR #2SB1215T-H
FPN#2SB1215T-H-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole, IPAK-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SB1215 |
Packaging Type | Bulk |
Packaging Quantity | 500 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 130MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 100V |
Maximum Collector Emitter Saturation Voltage | 500mV @ 150mA, 1.5A |
Maximum Cutoff Collector Current | 1µA (ICBO) |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1W |
Minimum DC Current Gain | 200 @ 500mA, 5V |
Minimum Operating Temperature | N/A |
Package Type | TP |
Technology Type | N/A |
Transistor Options | N/R |
Transistor Type | Single |