loading content
2N6517BU

2N6517BU

MFR #2N6517BU

FPN#2N6517BU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92-3
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N6517
Packaging TypeBulk
Packaging Quantity10000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863)
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth200MHz
Life Cycle StatusActive
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage350V
Maximum Collector Emitter Saturation Voltage1V @ 5mA, 50mA
Maximum Cutoff Collector Current50nA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation625mW
Minimum DC Current Gain30 @ 30mA, 10V
Minimum Operating TemperatureN/A
Package TypeTO-92
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle