2N6517BU
MFR #2N6517BU
FPN#2N6517BU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2N6517 |
Packaging Type | Bulk |
Packaging Quantity | 10000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | RoHS (2015/863) |
Reach Status | Compliant |
Configuration | NPN |
Gain Bandwidth | 200MHz |
Life Cycle Status | Active |
Maximum Collector Current | 500mA |
Maximum Collector Emitter Breakdown Voltage | 350V |
Maximum Collector Emitter Saturation Voltage | 1V @ 5mA, 50mA |
Maximum Cutoff Collector Current | 50nA (ICBO) |
Maximum Emitter Base Voltage | 6V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 625mW |
Minimum DC Current Gain | 30 @ 30mA, 10V |
Minimum Operating Temperature | N/A |
Package Type | TO-92 |
Technology Type | SI |
Transistor Options | N/R |
Transistor Type | Single |