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Transistors (1)
1dB Compression Point (P1dB)
N/A (1)
Configuration
NPN (1)
Family Name
2N2857UB (1)
Gain
21dB (1)
Gain Bandwidth
N/A (1)
Lifecycle Status
Obsolete (1)
Maximum Collector Base Voltage
30V (1)
Maximum Collector Current
40mA (1)
Maximum Collector Emitter Breakdown Voltage
15V (1)
Maximum Emitter Base Voltage
3V (1)
Maximum Junction Temperature
200°C (TJ) (1)
Maximum Operating Temperature
N/A (1)
Maximum Power Dissipation
200mW (1)
Minimum DC Current Gain
30 @ 3mA, 1V (1)
Minimum Junction Temperature
-65°C (TJ) (1)
Minimum Operating Temperature
N/A (1)
Noise Figure
4.5dB @ 450MHz (1)
Number of Elements
1 (1)
Output Intercept Point (IP3)
N/A (1)
Output Power
N/A (1)
Package Type
UB (1)
Packaging Type
N/A (1)
ROHS
Not Compliant (1)
Reach Status
Not Compliant (1)
RoHs China
Not Compliant (1)
RoHs Exemption Type
RoHS (2015/863) (1)
Technology Type
SI (1)
Transistor Type
Single (1)
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Microsemi Corporation
2N2857UB
MFR#
2N2857UB
FPN#
2N2857UB-FL
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