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Infineon

FS50R07N2E4BOSA1

MFR #FS50R07N2E4BOSA1

FPN#FS50R07N2E4BOSA1-FL

MFRInfineon

Part DescriptionIGBT MODULE 650V 70A 190W
Datasheet
45556-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryDiscrete Power Modules
Family NameFS50R07N2E4
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(c)-I, RoHS (2015/863)
Reach StatusCompliant
ConfigurationThree Phase Inverter
IGBT TypeTrench Field Stop
Input Capacitance3100pF @ 25V
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current70A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage1.95V @ 15V, 50A
Maximum Cutoff Collector Current1mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation190W
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package TypeN/A